A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

A Large-signal Compatible Dual-gate Mesfet Dc Model

This paper presents a simple yet powerful dualgate MESFET (DGFET) DC model. It is based on a single 3-dimensional power series expression and provides a high degree of freedom making it generally applicable. Further, it enables analytical parameter extraction. The model is capable of tracking I/V measurements and derivatives in a large bias range and, hence, is large-signal compatible. Results ...

Compact Model for Multiple-Gate SOI MOSFETs

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is ...

Novel dual-Vth independent-gate FinFET circuits

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flex...

FinFETs and Other Multi-Gate Transistors

An Accurate 2D Analytical Model for Transconductance to Drain Current ratio (gm/Id) for a Dual Halo Dual Dielectric Triple Material Cylindrical Gate All Around MOSFETs

A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...